Substrate and manufacturing method therefor, and electronic apparatus

ABSTRACT

A substrate and a manufacturing method therefor, and an electronic device are provided. The substrate includes: a base substrate including a working region, and a non-working region outside of the working region, the non-working region including a peripheral circuit region near the working region and a non-circuit region away from the working region; a peripheral circuit in the peripheral circuit region; a common electrode lead in the non-working region; a common electrode; and a bridging conductive layer made of opaque conductive material in the non-working region and electrically connects the common electrode and the common electrode lead. An orthographic projection of the bridging conductive layer on the base substrate at least partially coincides with an orthographic projection of the peripheral circuit region on the base substrate, and bridging conductive layer is insulated from the peripheral circuit.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application is a Continuation application of U.S.application Ser. No. 16/481,482, filed on Jul. 28, 2019 which claims thebenefits of and priority to the Chinese patent application No.201711376371.X, filed on Dec. 19, 2017, entitled “A SUBSTRATE AND AMETHOD OF MANUFACTURING THE SAME, AN ELECTRONIC DEVICE,” and it isincorporated herein by reference in its entirety.

TECHNICAL FIELD

At least one embodiment of the present disclosure relates to a substrateand a method of manufacturing the same, an electronic device.

BACKGROUND

Driving circuits, integrated circuit chips and so on for control ofdisplay operation are generally provided in or connected to a peripheralcircuit region that surrounds a display region of a display. Thesestructures occupy a larger space, and this will lead to a larger bezelsize of the display. To increase the percentage of the area of thedisplay area to the area of the display as much as possible while thereliability of fixing between the bezel and the display screen isensured, it is necessary that the size of the peripheral circuit regionis compressed as much as possible to form a bezel that is as narrow aspossible. As the resolution of the display is becoming bigger andbigger, to decrease the percentage of a bezel in the display as much aspossible, the manufacturers are all devoted to a research in narrowingof the display's bezel.

SUMMARY

At least one embodiment of the present disclosure provides a substrate,comprising a base substrate, a peripheral circuit, and a commonelectrode lead. The base substrate comprises a working region, anon-working region outside of the working region and an outer profileedge. The non-working region includes a peripheral circuit region nearthe working region and a non-circuit region away from the workingregion. The peripheral circuit is in the peripheral circuit region. Thecommon electrode lead is in the non-working region. The peripheralcircuit region is provided with the peripheral circuit, and theperipheral circuit is not provided in the non-circuit region. Anorthographic projection of the common electrode lead on the basesubstrate at least partially coincides with an orthographic projectionof the peripheral circuit region on the base substrate, and the commonelectrode lead is insulated from the peripheral circuit.

For example, in the substrate provided by an embodiment of the presentdisclosure, the orthographic projection of the common electrode lead onthe base substrate at least partially coincides with the orthographicprojection of the peripheral circuit on the base substrate.

For example, in the substrate provided by an embodiment of the presentdisclosure, the common electrode lead extends along at least part of theouter profile edge, and a portion of the common electrode lead is in thenon-circuit region.

For example, in the substrate provided by an embodiment of the presentdisclosure, the orthographic projection of the common electrode lead onthe base substrate is within the orthographic projection of theperipheral circuit on the base substrate.

For example, the substrate provided by an embodiment of the presentdisclosure further comprises a common electrode, the common electrodeextending from the working region to the non-working region; and thecommon electrode being electrically connected to the common electrodelead.

For example, the substrate provided by an embodiment of the presentdisclosure further comprises a bridging conductive layer, the bridgingconductive layer being in the non-working region, insulated from theperipheral circuit and electrically connecting the common electrode leadwith the common electrode.

For example, in the substrate provided by an embodiment of the presentdisclosure, the bridging conductive layer directly overlaps with thecommon electrode lead to realize electrical connection between thebridging conductive layer and the common electrode lead; and the commonelectrode and the bridging conductive layer are of an integralstructure.

For example, in the substrate provided by an embodiment of the presentdisclosure, the bridging conductive layer directly overlaps with thecommon electrode lead to realize electrical connection between thebridging conductive layer and the common electrode lead; and the commonelectrode directly overlaps with the bridging conductive layer torealize electrical connection between the common electrode and thebridging conductive layer.

For example, in the substrate provided by an embodiment of the presentdisclosure, the peripheral circuit includes an external connectionportion including an external connection joint and an externalconnection lead; and an orthographic projection of the externalconnection joint on the base substrate does not coincides with theorthographic projection of the common electrode lead on the basesubstrate.

For example, in the substrate provided by an embodiment of the presentdisclosure, the external connection joint is on a side of the commonelectrode lead near the outer profile edge of the base substrate.

For example, in the substrate provided by an embodiment of the presentdisclosure, the external connection joint is on a side of the commonelectrode lead away from the outer profile edge of the base substrate.

For example, the substrate provided by an embodiment of the presentdisclosure further comprises an interlayer insulating layer, theinterlayer insulating layer being provided between the peripheralcircuit and the common electrode lead, and covering the peripheralcircuit to insulate the peripheral circuit from the common electrodelead.

For example, in the substrate provided by an embodiment of the presentdisclosure, an end of the interlayer insulating layer near the outerprofile edge of the base substrate has a flat surface, and the commonelectrode lead is arranged on the flat surface.

For example, in the substrate provided by an embodiment of the presentdisclosure, the interlayer insulating layer includes a via hole exposingan external connection joint of the peripheral circuit, and the externalconnection lead is electrically connected to the external connectionjoint of the peripheral circuit through the via hole.

For example, in the substrate provided by an embodiment of the presentdisclosure, the external connection lead and the common electrode leadare of a same material and provided in a same layer.

For example, in the substrate provided by an embodiment of the presentdisclosure, the peripheral circuit includes a first thin film transistorand a second thin film transistor, a capacitor, a peripheral circuitsignal output lead, and a connecting line. Each of the first thin filmtransistor and the second thin film transistor includes a gateelectrode, a source electrode and a drain electrode. The capacitorincludes a first plate and a second plate disposed oppositely to eachother, the first plate and gate electrodes of the thin film transistorsbeing arranged in a same layer. The peripheral circuit signal outputlead is configured to output an output signal of the peripheral circuitto the working region. The connecting line includes a first portion. Thesecond plate of the capacitor is electrically connected with the sourceelectrode of the drain electrode of the first thin film transistorthrough the first portion of the connecting line. The externalconnection joint, the second plate of the capacitor and the connectingline are provided in a same layer.

For example, in the substrate provided by an embodiment of the presentdisclosure, the connecting line further includes a second portion and athird portion. The drain electrode of the first thin film transistor iselectrically connected with the source electrode of the second thin filmtransistor through a second portion of the connecting line; and thedrain electrode of the second thin film transistor is electricallyconnected to the peripheral circuit signal output lead through a thirdportion of the connecting line.

For example, in the substrate provided by an embodiment of the presentdisclosure, the working region includes a display element, the displayelement includes a pixel defining layer, a light-emitting layer, a firstelectrode and a second electrode. The pixel defining layer includes aplurality of openings. The light-emitting layer is provided in theplurality of openings. The first electrode covers the pixel defininglayer and the light-emitting layer, and extends from the display regiontoward the first common electrode lead. The second electrode is providedbetween the base substrate and the light-emitting layer. The firstelectrode is a common cathode, and the first common electrode lead is acommon cathode wire; or the first electrode is a common anode, and thefirst common electrode lead is a common anode wire.

At least one embodiment also provides an electronic device, comprisingany of the substrates.

At least one embodiment also provides a method of manufacturing asubstrate, comprising: providing a base substrate, the base substrateincluding a working region, a non-working region outside of the workingregion and an outer profile edge, the non-working region including aperipheral circuit region near the working region and a non-circuitregion away from the working region; forming a peripheral circuit in theperipheral circuit region of the non-working region; and forming acommon electrode lead extending along at least part of the outer profileedge of the base substrate. The peripheral circuit region is providedwith the peripheral circuit, the peripheral circuit is not provided inthe non-circuit region, an orthographic projection of the commonelectrode lead on the base substrate at least partially coincides withan orthographic projection of the peripheral circuit region on the basesubstrate, and the common electrode lead is insulated from theperipheral circuit.

For example, the substrate manufacturing method provided by anembodiment of the present disclosure further comprises forming abridging conductive layer. The bridging conductive layer is formed inthe non-working region, and is insulated from the peripheral circuit andelectrically connects the common electrode lead with the commonelectrode.

For example, the substrate manufacturing method provided by anembodiment of the present disclosure further comprises forming a commonelectrode in the working region, the common electrode being electricallyconnected to the common electrode lead.

For example, in the substrate manufacturing method provided by anembodiment of the present disclosure, the forming the peripheral circuitincludes forming an external connection portion of the peripheralcircuit, the external connection portion including an externalconnection joint and an external connection lead, and an orthographicprojection of the external connection joint on the base substrate doesnot coincide with the orthographic projection of the common electrodelead on the base substrate.

For example, in the substrate manufacturing method provided by anembodiment of the present disclosure, the forming the peripheral circuitincludes forming a first thin film transistor and a second thin filmtransistor, each of the first thin film transistor and the second thinfilm transistor includes a gate electrode, a source electrode and adrain electrode; forming a gate metal layer pattern, which includesforming a gate electrode of the first thin film transistor and a gateelectrode of the second thin film transistor, a first plate of acapacitor, and a peripheral circuit output lead by a same patterningprocess with a same mask; and forming a second metal layer pattern,which includes forming a second plate of the capacitor, a connectingline of the peripheral circuit and the external connection joint by asame patterning process with a same mask. The connecting line includes afirst portion, a second portion and a third portion; the second plate ofthe capacitor is electrically connected to the source electrode of thefirst thin film transistor by the first portion of the connecting line;the drain electrode of the first thin film transistor is electricallyconnected with the source electrode of the second thin film transistorby the second portion of the connecting line; and the drain electrode ofthe second thin film transistor is electrically connected to theperipheral circuit signal output lead by the third portion of theconnecting line.

For example, the substrate manufacturing method provided by anembodiment of the present disclosure further comprises forming aninterlayer insulating layer and a via hole in the interlayer insulatinglayer exposing the external connection joint. The interlayer insulatinglayer is provided between the peripheral circuit and the commonelectrode lead, covers the peripheral circuit to insulate the peripheralcircuit from the common electrode lead. The external connection lead iselectrically connected to the external connection point through the viahole, and the external connection lead and the common electrode lead areformed by a same patterning process with a same mask.

BRIEF DESCRIPTION OF THE DRAWINGS

A brief description will be given below to the accompanying drawings ofthe embodiments to provide a more clear understanding of the technicalproposals of the embodiments of the present disclosure. Apparently, thedrawings described below only involve some embodiments of the presentdisclosure but are not intended to limit the present disclosure.

FIG. 1 is a schematic plan view of a substrate;

FIG. 2 is a schematically sectional view taken along a line I-I′ in FIG.1;

FIG. 3 is a schematic plan view of a substrate provided by an embodimentof the present disclosure;

FIG. 4A is a schematically sectional view taken along a line H-H′ inFIG. 3;

FIG. 4B is another schematically sectional view taken along the lineH-H′ in FIG. 3;

FIG. 4C is still another schematically sectional view taken along theline H-H′ in FIG. 3;

FIG. 4D is yet still another schematically sectional view taken alongthe line H-H′ in FIG. 3;

FIG. 4E is a schematic plan view of another substrate provided by anembodiment of this disclosure;

FIG. 4F is a schematically sectional view taken along a line G-G′ inFIG. 4E;

FIG. 4G is a schematically partial enlarged view of a peripheral circuitin FIG. 4A;

FIG. 5A is a schematic plan view of an array substrate provided by anembodiment of the present disclosure;

FIG. 5B is a schematic plan view of another array substrate provided byan embodiment of the present disclosure;

FIG. 5C is a schematic plan view of still another array substrateprovided by an embodiment of the present disclosure;

FIG. 6 is a schematically sectional view taken along a line G-G′ in FIG.5A;

FIG. 7 is a schematic diagram illustrating a display device provided byan embodiment of the present disclosure;

FIGS. 8A to 8L are schematic diagrams illustrating a manufacturingmethod of an array substrate provided by an embodiment of the presentdisclosure;

FIG. 8M is a schematically partial enlarged view of a peripheral circuitin FIG. 8L; and

FIGS. 9A to 9F are schematic diagrams illustrating a manufacturingmethod for a driving circuit of an array substrate provided by anembodiment of the present disclosure.

DETAILED DESCRIPTION

In order to make objects, technical details and advantages of theembodiments of the present disclosure apparent, the technical solutionsof the embodiments will be described in a clearly and completely way inconnection with the drawings related to the embodiments of thedisclosure. Apparently, the described embodiments are just a part butnot all of the embodiments of the disclosure. Based on the describedembodiments herein, one of ordinary skill in the art can obtain otherembodiment(s), without any inventive work, which shall be within thescope of the disclosure.

Unless otherwise defined, all the technical and scientific terms usedherein have the same meanings as commonly understood by one of ordinaryskill in the art to which the present disclosure belongs. The terms,such as ‘first,’ or the like, which are used in the description and theclaims of the present disclosure, are not intended to indicate anysequence, amount or importance, but for distinguishing variouscomponents. The terms, such as ‘comprise/comprising,’ include/including;or the like are intended to specify that the elements or the objectsstated before these terms encompass the elements or the objects andequivalents thereof listed after these terms, but not preclude otherelements or objects. The terms, ‘in/inside,’ ‘out/outside,’ ‘on,’‘under,’ or the like are only used to indicate relative positionrelationship, and when the absolute position of the object which isdescribed is changed, the relative position relationship may be changedaccordingly.

The dimensions of attached drawings used in the present disclosure arenot drawn strictly in accordance with the actual proportion, and theamount of components in an array substrate is not limited to the amountshown in the drawings. The specific dimension and quantity of eachstructure may be determined according to the actual needs. The attacheddrawings in this disclosure are only structurally schematic diagrams.

In this disclosure, “outside of a working region” refers to a side ofthe working region near the outer profile edge of a base substrate. Thedirect overlap between structure A and structure B refers to thatstructure A contacts structure B and no any other structure existsbetween the structure A and the structure B. For example, structure A isa bridging conductive layer, and structure B is a common electrode lead.For example, structure A is a common electrode, and structure B is abridging conductive layer.

It is to be noted that for a source electrode and a drain electrode ofany one of thin film transistors in the present disclosure, the two aremerely distinguished by the name, and in fact, the source electrode andthe drain electrode of any of a plurality of thin film transistors inthe present disclosure are exchangeable.

For an organic light emitting diode (OLED) display device, it may notuse a backlight, and moreover, the display viewing angle is wide, thepicture quality is uniform, the response speed is fast, colorization iseasier, light emission can be achieved with a simple driving circuit,the manufacturing process is simple, manufacture into a flexible panelis possible, it complies with the demands of lightness, thinness,shortness and smallness, and the application covers panels of varioussizes. However, an active matrix OLED (AMOLED) display device at presentstage still has some shortcomings in some aspects. For example, comparedwith an active matrix LCD (AMLCD) display device, a peripheral circuitstructure of an active back panel for the AMOLED display device occupiesa relatively large area, and this makes its frame width be larger. Inaddition, lifetime of the AMOLED display device is also lower than thatof the AMLCD at present, and it is partly due to the fact that the Jouleheat at a current concentration region in the peripheral circuit leadsto a higher temperature rise, and the lifetime of OLED devices in thevicinity of this region is adversely affected. Reducing the temperaturerise caused by the Joule heat of the peripheral circuit also needs tooccupy a larger area to reduce the wiring resistance of the peripheralcircuit generally.

FIG. 1 is a schematic plan view of a substrate, and FIG. 2 is aschematically sectional view taken along a line I-I′ in FIG. 1.Referring to FIG. 1 and FIG. 2, the substrate is a display substrate,which includes a base substrate 111 including a display region 1003 anda peripheral region 1001 around the display region 1003, and theperipheral region 1001 includes a drive circuit region 1002. On the basesubstrate 111, a drive circuit layer 201 is disposed, and in a place ofthe drive circuit layer 201 corresponding to the drive circuit region1002, a driving circuit is disposed, such as a gate driving circuit. Thesubstrate further includes a common electrode lead 401 disposed on thebase substrate 111. The common electrode lead 401 is located on a sideof the drive circuit region 1002 away from the display region 1003, andextends along the outer profile edge of the base substrate 111. A firstinsulating layer is arranged between the common electrode lead 401 andthe drive circuit layer 201, so that the common electrode lead 401 isinsulated from the driving circuit located in the drive circuit region1002. The substrate's peripheral circuit structure further includes abridging conductive layer 601 and a common electrode 701 that iselectrically connected to the common electrode lead 401 via the bridgingconductive layer 601, that is, the bridging conductive layer 601 acts asa bridge by which electrical connection between the common electrode 701and the common electrode lead 401 is realized. The common electrode 701extends from the display region 103 to the drive circuit region 1002 andcontacts an end of the bridging conductive layer 601 near the displayregion 1003 so as to achieve electrical connection, and an end of thebridging conductive layer 601 away from the display region 1003 contactsthe common electrode lead 401 so as to achieve electrical connection.

In the display substrate shown in FIG. 1 and FIG. 2, the commonelectrode lead occupies a given width alone (that is, it does not sharewith other circuit structure) around the display region, that is, itoccupies a given area alone, and this is not advantage in achieving anarrower bezel around the display region. In addition, the distancebetween the common electrode lead and the common electrode is larger,and the width of the bridging conductive layer is longer, which resultsin a larger resistance of the bridging conductive layer, and it is notadvantage to increase the transmission speed of signal, and will alsolead to the increasing of joule heat, and it is also disadvantage to thelifetime of the display device to which the display substrate isapplied.

According to at least one embodiment of the present disclosure, asubstrate is provided, which includes a base substrate, a peripheralcircuit and a common electrode lead. The base substrate includes aworking region, a non-working region outside of the working region andan outer profile edge. The non-working region includes a peripheralcircuit region near the working region and a non-circuit region awayfrom the working region. The peripheral circuit is arranged in theperipheral circuit region, and the common electrode lead is arranged inthe non-working region. The peripheral circuit region includes theperipheral circuit provided therein, and the peripheral circuit is notprovided in the non-circuit region. The orthographic projection of thecommon electrode lead on the base substrate at least partially coincideswith the orthographic projection of the peripheral circuit region on thebase substrate, and the common electrode lead is insulated from theperipheral circuit.

For example, FIG. 3 is a schematic plan view of a substrate provided byan embodiment of the present disclosure, FIG. 4A is an exemplarilyschematic sectional view taken along a line H-H′ in FIG. 3, FIG. 4B isanother exemplarily schematic sectional view taken along the line H-H′in FIG. 3, FIG. 4C is still another exemplarily schematic sectional viewtaken along the line H-H′ in FIG. 3, and FIG. 4D is yet still anotherexemplarily schematic sectional view taken along the line H-H′ in FIG.3.

Exemplarily, as shown in FIG. 4A, the substrate 10 includes a basesubstrate 1 and a common electrode lead 4. The base substrate 1 includesa working region 103, a non-working region 101 outside of the workingregion 103 and an outer profile edge 12. That is, the non-working region101 is located on a side of the working region 103 near the outerprofile edge 12 of the base substrate 1. The outer profile edge 12refers to an outer border of the base substrate 1. For example, thenon-working region 101 includes a peripheral circuit region 102 near theworking region 103 and a non-circuit region away from the working region103. For example, the working region 103 may be a display region or alight-emitting region, etc., and accordingly, the non-working region 101may be a non-display region or a non-light-emitting region, etc. Thenon-working region 101, for example, may have circuits, pads,interconnection structures and so on for supporting and implementingdisplay, light emission and other functions provided therein, althoughit is not used for display, light emission, etc.

A circuit layer 2 is provided on the base substrate 1. The circuit layer2 includes a peripheral circuit 13 (the structure of which is notspecifically shown in FIG. 4A) located in the peripheral circuit region102, for controlling the working state of a working unit within theworking region 103. For example, when the working unit is alight-emitting unit, the peripheral circuit 13 may be used to controlwhether the light-emitting unit emits light, or not, and the emittedlight intensity. The peripheral circuit 13 may, for example, be adriving circuit, such as a gate driving circuit, etc. The presentembodiment does not limit the type and concrete structure of theperipheral circuit 13.

As shown in FIG. 3 and FIG. 4A, for example, the common electrode lead 4is arranged along the outer profile edge 12 of the base substrate 1. Inother embodiment of the present disclosure, the common electrode lead 4may be arranged along a portion of the outer profile edge 12 of the basesubstrate 1. For example, the orthographic projection of the commonelectrode lead 4 on the base substrate 1 partially coincides with theorthographic projection of the peripheral circuit region 102 on the basesubstrate 1. For example, a portion of the common electrode lead 4 islocated in the peripheral circuit region 102, and the other portion ofthe common electrode lead 4 is located in a non-circuit region of thenon-working region 101. The orthographic projection of the commonelectrode lead 4 on the base substrate 1 partially coincides with theorthographic projection of the peripheral circuit region 102 on the basesubstrate 1. For example, the orthographic projection of the commonelectrode lead 4 on the base substrate 1 partially coincides with theorthographic projection of the peripheral circuit 13 on the basesubstrate 1. That is, in a direction perpendicular to the base substrate1, a portion of the common electrode lead 4 coincides with a portion ofthe peripheral circuit 13. For another example, the peripheral circuit13 includes a plurality of circuit elements (e.g., thin filmtransistors, lead wires, etc.) and a spacer zone between the pluralityof circuit elements, and the orthographic projection of the commonelectrode lead 4 on the base substrate 1 coincides with the orthographicprojection of the spacer zone on the base substrate 1. Also, the commonelectrode lead 4 is insulated from the peripheral circuit 13. Comparedwith the substrate shown in FIG. 2, the width occupied by the commonelectrode lead 4 alone in the non-working region 101 can be reduced inthe substrate 10 provided by an embodiment of the present disclosure,and when the peripheral circuit structure is applied to a substrate,panel or display device, the bezel around a working region can benarrowed (width of the bezel in a direction perpendicular to the commonelectrode lead is reduced). Or, due to the fact that a portion of thecommon electrode lead 4 overlaps with a portion of the peripheralcircuit 13 and thus that portion of space occupied by the commonelectrode lead 4 is reduced, it is conducive to increasing the width ofthe common electrode lead 4, so as to reduce the resistance of thecommon electrode lead 4. In this way, on the one hand, it is propitiousin improvement of the transmission speed of signal in the commonelectrode lead, in addition, it is conductive to reducing the powerconsumption and generated joule heat of the common electrode lead duringoperation, and to reducing the temperature rise caused by the jouleheat. Consequently, it is propitious for improvement of lifetime of adevice to which the substrate's peripheral circuit structure is applied,fir example, a display device.

It is to be noted that the width of the common electrode lead 4 in theembodiment of this disclosure refers to size of a dimension h in adirection perpendicular to the outer profile edge 12 as shown in FIG. 3.

For example, the substrate 10 may further include a common electrode 7,which extends from the working region 103 to the peripheral circuitregion 102, and is electrically connected to the common electrode lead4. In this way, a common electrical signal (voltage) is transmitted tothe common electrode 7 via the common electrode lead 4, so as to controlor drive the working state of the working region 103.

For example, as shown in FIG. 3 and FIG. 4A, the substrate 10 mayfurther include a bridging conductive layer 6, which is located in anon-working region 101 (e.g., in a peripheral circuit region 102) andinsulated from the peripheral circuit 13. The bridging conductive layer6 extends across the peripheral circuit 13 and electrically connects thecommon electrode lead 4 with the common electrode 7. For example, aportion of the common electrode 7 may be situated in the 3 non-workingregion 101 and extend from the 3 non-working region 101 to the workingregion 103. One end of the common electrode 7 away from the workingregion 103 is electrically connected to the bridging conductive layer 6.For example, one end of the common electrode 7 away from the workingregion 103 may be in direct contact with one end of the bridgingconductive layer 6 near the working region 103 so as to achieveelectrical connection. That is, the common electrode 7 directly overlapswith the bridging conductive layer 6 so as to realize electricalconnection between the common electrode 7 and the bridging conductivelayer 6. At the same time, the bridging conductive layer 6 iselectrically connected to the common electrode lead 4, so as toelectrically connect the common electrode lead 4 to the common electrode7 by the bridging conductive layer 6. For example, one end of thebridging conductive layer 6 away from the working region 103 directlyoverlaps with the common electrode lead 4, so as to achieve electricalconnection between the bridging conductive layer 6 and the commonelectrode lead 4. This direct overlapping is beneficial to the reductionof the contact resistance and is easy to fabricate it. Generally, thecommon electrode 7 may be formed by chemical vapor deposition ormagnetron sputtering, or the like, the bridging conductive layer 6 maybe formed by photolithography, while the dimensional accuracy of a filmlayer formed by chemical vapor deposition or magnetron sputtering islower than that of a photolithography process, and it generally need toreserve a sufficient packaging space previously in a place of thenon-working region 101 on the periphery of a substrate that is near theouter profile edge 12 of the base substrate 1. If the common electrode 7is made to directly overlap with the common electrode lead 4, it needsmore packaging space to be reserved previously. By provision of thebridging conductive layer, the dimensional accuracy in the case that apackaging space is reserved previously can be improved. In this way, itis further conducive to the realization of narrower bezel.

In the substrate's peripheral circuit structure provided by anembodiment of the present disclosure, the common electrode lead 4 mayalso be arranged along a portion of the outer profile edge 12 of thebase substrate 1. The orthographic projection of the common electrodelead 4 on the base substrate 1 partially coincides with the orthographicprojection of the peripheral circuit region 102 on the base substrate 1,and this is also beneficial to the reduction of the width of thebridging conductive layer 6, so as to beneficial to reducing theresistance of the bridging conductive layer 6. In this way, on the onehand, it is propitious for the improvement of the transmission speed ofa signal in the bridging conductive layer, in addition, it is conductiveto reducing the power consumption and the generated Joule heat of thebridging conductive layer during operation, and to reducing temperaturerise caused by the Joule heat. Consequently, it is beneficial to theimprovement of lifetime of a device, to which the substrate's peripheralcircuit structure is applied, for example, for a display device. Thewidth of the bridging conductive layer 6 refers to the width of thebridging conductive layer 6 in a direction where the above dimension hlies.

For example, the bridging conductive layer 6, the common electrode lead4 and the common electrode 7 include material, which is a transparentconductive material, or an opaque conductive material, and thetransparent conductive material, for example, may be indium tin oxide(ITO), indium zinc oxide (IZO), or the like, and the opaque conductivematerial, for example, may be a metallic material, such as copper,aluminum, a copper alloy, an aluminum alloy, or the like, with higherconductivity. The bridging conductive layer 6 and common electrode lead4 adopt the above materials or materials of other kinds with higherconductivity, and this is beneficial to the improvement of thetransmission speed of a common signal. For example, when the workingregion 103 is a light-emitting region, and light needs to exit from thecommon electrode 7 side in FIG. 4A, the common electrode 7 made of atransparent material.

The material types listed above are only exemplary embodiments.Embodiments of the present disclosure do not limit materials of thebridging conductive layer, the common electrode lead, and the commonelectrode, and those skilled in the art can choose according to specificneeds.

For example, the peripheral circuit 13 may include an externalconnection portion 9, and the external connection portion 9 includes anexternal connection joint 901 and an external connection lead 902. Theperipheral circuit 13 may include an internal connection portion and theexternal connection portion 9. The internal connection portion refers toa conductive structure and so on formed by interconnection of variouscomponents of the peripheral circuit 13. For example, the peripheralcircuit 13 is a driving circuit, such as a gate driving circuit, or adata driving circuit. Exemplary description will be made below by takingthe peripheral circuit 13 being a gate driving circuit as an example,and the gate driving circuit is of GOA type. The internal connectionportion includes leads inside each driving unit of the gate drivingcircuit, leads between driving units, and interconnection parts betweenthin film transistors and capacitors. The external connection portion 9includes a portion of the peripheral circuit 13 connected to itsexternal signal transmission structure. For example, the externalconnection portion 9 includes an external connection joint 901 connectedto a plurality of drive units of a gate driving circuit and an externalconnection lead 902, and the external connection lead 902 can be used toelectrically connect the external connection joint 901 with the externalsignal transmission structure. For example, the external connectionportion 9 may be used for connection to a timing controller.

For example, the orthographic projection of the external connectionjoint 901 on the base substrate 1 does not coincide with theorthographic projection of the common electrode lead 4 on the basesubstrate 1. For example, the peripheral circuit region 102 includes afirst zone 1021 away from the working region 103 and a second zone 1022near the working region. The external connection joint 901 is arrangedin the second zone 1022 of the peripheral circuit region 102. Forexample, the second zone 1022 does not overlap with the common electrodelead 4 in a direction perpendicular to the base substrate 1, so that theorthographic projection of the external connection joint 901 on the basesubstrate 1 does not coincide with the orthographic projection of thecommon electrode lead 4 on the base substrate 1. In this way, it isconvenient to form a via hole over the external connection joint 901 andto arrange the external connection lead 902, so that this process willnot be hindered by the common electrode lead 4.

For example, the substrate 10 may further include an interlayerinsulating layer 3 arranged between the peripheral circuit 13 and thecommon electrode lead 4, and the interlayer insulating layer 3 coversthe peripheral circuit 13 so that the peripheral circuit 13 is insulatedfrom the common electrode lead 4. For example, material of theinterlayer insulating layer 3 may be an organic insulating material,such as resin, and rubber, and may also be an inorganic insulatingmaterial, such as silicon nitride. Material of the interlayer insulatinglayer 3 is not limited to the above listed types, and embodiments of thepresent disclosure do not limit them.

For example, the interlayer insulating layer 3 includes a via holeexposing the external connection joint 901 of the peripheral circuit 13,through which the external connection lead 902 is electrically connectedto the external connection joint 901 of the peripheral circuit 13. Forexample, the external connection lead 902 may be electrically connectedto an external controller, such as a timing controller, so that theexternal controller and the peripheral circuit can be used for jointcontrol of the working state of the working region 103, for example, forcontrol of the turn-on and turn-off of work units of the work region103, execution of progressive scanning, and so on.

For example, the external connection lead 902 may be of a same materialand arranged in a same layer as the common electrode lead 4. This isconducive to simplifying the structure and simplifying the manufacturingprocess. Material of the external connection lead 902 may refer to theprevious description about the material of the common electrode lead 4.

It is to be noted that, in this disclosure, the external connection leadand the common electrode lead being arranged in the same layer refers tothat the external connection lead and the common electrode lead may beformed by a same patterning process with the same mask, and the externalconnection lead and the common electrode lead are in contact with a samelayer. For example, in FIG. 4A, both the external connection lead 902and the common electrode lead 4 contact the interlayer insulating layer3.

For example, the substrate 10 may further include a planarization layer5 covering the peripheral circuit 13 and a portion of the commonelectrode lead 4, for providing a flat surface for arrangement offunctional devices in the working region 103 while insulation of theexternal connection portion 9 of the peripheral circuit 13 from thebridging conductive layer 6 and the common electrode 7 located above theplanarization layer is achieved. The planarization layer 5 exposes aportion of the common electrode lead 4, so that the bridging conductivelayer 6 can be electrically connected to the common electrode lead 4.

For example, in the embodiment shown in FIG. 4A, at a side of theinterlayer insulating layer 3 near the outer profile edge 12 of the basesubstrate 1, a step portion is formed, and the common electrode lead 4covers the step portion, and extends from a lower position relative tothe base substrate 1 to a higher position relative to the base substrate1. In other embodiment of the present disclosure, no this step portionis provided. For example, in the embodiment shown in FIG. 4B, theinterlayer insulating layer 3 has a flat surface on a side near theouter profile edge of the base substrate 1, and in this case, the commonelectrode lead 4 is arranged on the flat surface.

The above embodiment is the case where a portion of the common electrodelead 4 overlaps with the first zone 1021 of the peripheral circuitregion 102 in a direction perpendicular to the base substrate 1, and inanother embodiment of the present disclosure, as shown in FIG. 4C, theentire common electrode lead 4 overlaps with the peripheral circuit 13in a direction perpendicular to the base substrate 1. That is, theorthographic projection of the common electrode lead 4 on the basesubstrate 1 falls within the orthographic projection of the peripheralcircuit 13 on the base substrate 1. In this way, width of thenon-working region 101 can be further reduced, and the bezel width of adevice, to which the substrate's peripheral circuit structure 10 isapplied, such as a display device, is further reduced.

In still another embodiment of the present disclosure, as shown in FIG.4D, the common electrode 7 and the bridging conductive layer 6 may alsobe an integral structure to realize electrical connection between thecommon electrode 7 and the common electrode lead 4. It can be understoodthat the common electrode 7 and the common electrode lead 4 may overlapdirectly to realize electrical connection between them, while nobridging conductive layer 6 is provided.

In the embodiment shown in FIGS. 4A to 4D, the external connection joint901 is disposed on a side of the common electrode lead 4 away from theouter profile edge 12 of the base substrate 1.

In another embodiment, an external connection joint may also be locatedon a side of a common electrode lead near the outer profile edge of abase substrate. FIG. 4E is a schematic plan view illustrating anothersubstrate's peripheral circuit structure provided by an embodiment ofthe present disclosure; FIG. 4F is a schematically sectional view takenalong a line G-G′ in FIG. 4E. For example, as shown in FIG. 4F, anexternal connection joint 901 is disposed on a side of a commonelectrode lead 4 near the outer profile edge of a base substrate 1, thatis, the connection joint 901 is disposed between the common electrodelead 4 and the outer profile edge of the base substrate 1. Compared withthe embodiment shown in FIG. 4A-4D, the length of the bridgingconductive layer 6 can be further reduced by the embodiment shown inFIG. 4F, and the resistance of the bridging conductive layer 6 isfurther reduced. Other technical effects brought about by the embodimentshown in FIG. 4F can refer to the above descriptions, and no details arerepeated here.

FIG. 4G is a schematically partial enlarged view of a peripheral circuitin FIG. 4A. Exemplarily, as shown in FIG. 4G, the peripheral circuit 13may include a plurality of thin film transistors arranged on the basesubstrate 1, for example, a first thin film transistor 131 and a secondthin film transistor 132. Each of the first thin film transistor 131 andthe second thin film transistor 132 includes a first portion 1301 and agate electrode 1305. A source electrode, a drain electrode, and achannel area are included in each of the first portions 1301 of thefirst thin film transistor 131 and the second thin film transistor 132.The peripheral circuit 13 may further include a first insulating layer1302 covering the first portions 1301 of the first thin film transistor131 and the second thin film transistor 132, a capacitor and aperipheral circuit signal output lead 1306. The peripheral circuitsignal output lead 1306 is configured to output an output signal of theperipheral circuit to the working region on an inner side of thenon-working region. For example, when the peripheral circuit 13 is a GOAdriving circuit, a gate driving signal (a progressive scanning signal)is outputted from the peripheral circuit signal output lead 1306. Thecapacitor includes a first plate 1304 and a second plate 1310 disposedto be opposed. For example, the gate electrode 1305 of thin filmtransistor, the first plate 1304 of the capacitor and the peripheralcircuit signal output lead 1306 are arranged in a same layer, and eachof them is disposed on the first insulating layer 1302. They may be madeof a same material, and may be formed simultaneously by a same process.For example, they are formed by a same patterning process with a samemask. The peripheral circuit may further include a second insulatinglayer 1307 covering the gate electrode 1305, the first plate 1304 of thecapacitor and the peripheral circuit signal output lead 1306. The firstinsulating layer 1302 and the second insulating layer 1307 containsecond via holes exposing source electrodes or drain electrodes of thethin film transistors.

For example, the peripheral circuit 12 further includes an internalconnection portion including a connecting line, and for example, theconnecting line includes a first portion 1311, a second portion 1312 anda third portion 1313. The second plate 1310 of the capacitor, theconnecting line and the external connection joint 901 are arranged onthe second insulating layer 1307. A drain electrode of the first thinfilm transistor 131 is electrically connected to a source electrode ofthe second thin film transistor 132 by the second portion 1312 of theconnecting line through a second via hole. The second plate 1310 of thecapacitor is electrically connected to a source electrode of the firstthin film transistor 131 by the first portion 1311 of the connectingline through a second via hole. Furthermore, the second plate 1310 ofthe capacitor and the connecting line 1311 may be formed integrally, andthey can be formed of a same material simultaneously by a samepatterning process with a same mask. A drain electrode of the secondthin film transistor 132 is electrically connected to the peripheralcircuit signal output lead 1306 by the third portion 1313 of theconnecting line. In addition, the external connection joint 901, thesecond plate 1310 of the capacitor and the connecting line are disposedin a same layer.

It is to be noted that ‘being disposed in the same layer’ in the presentdisclosure refers to that structures disposed in the same layer may beformed from the same material simultaneously by the same patterningprocess with the same mask, and in contact with a same layer, which doesnot refer to that height of these structures relative to the basesubstrate is the same. For example, the external connection joint 901,the second plate 1310 of the capacitor and the connecting line are madeof a same material, and formed from a same film layer simultaneously bya same patterning process with a same mask, and the external connectionjoint 901, the second plate 1310 of the capacitor and the connectingline are all in contact with the second insulating layer 1307, so as tosimplify structure of the peripheral circuit and fabrication process.

For example, material of the external connection joint 901, the secondplate 1310 of the capacitor and the connecting line may be copper,aluminum, a copper alloy, an aluminum alloy, silver, chromium, or thelike, but is not limited to the above listed categories. Embodiments ofthe present disclosure do not set a limit to the material of components,and those skilled in the art can make a reference to a common technique.

In the substrate provided by an embodiment of the present disclosure,the entire peripheral circuit 13 is located below the interlayerinsulating layer 3, that is, the interlayer insulating layer 3 coversthe peripheral circuit 13. For example, the interlayer insulating layer3 covers the external connection joint 901, the second plate 1310 of thecapacitor and the connecting line, etc. In this way, a flat insulatinglayer can be formed on the peripheral circuit 13, and when a commonelectrode lead 4 is arranged on an interlayer insulating layer 3, andthe common electrode lead 4 partially or even completely overlaps with aperipheral circuit below the interlayer insulating layer 3, insulationof the common electrode lead 4 from the peripheral circuit 13 can beachieved.

For example, the substrate provided by an embodiment of the presentdisclosure may be an array substrate, or a display substrate, etc. FIG.5A is a schematic plan view of an array substrate provided by anembodiment of the present disclosure, FIG. 5B is a schematic plan viewof another array substrate provided by an embodiment of the presentdisclosure, FIG. 5C is a schematic plan view of still another arraysubstrate provided by an embodiment of the present disclosure; and FIG.6 is a schematically sectional view taken along a line G-G′ in FIG. 5A.

For example, as shown in FIG. 5A, a common electrode lead 4 and aperipheral circuit of a peripheral circuit region 102 are used tocontrol the working state of a working region 103. The common electrodelead 4 and the peripheral circuit region 102 may be in a place on theleft side of an array substrate 100 near its outer profile edge, and acontrol signal is input from the left side to the working region 103.For example, as shown in FIG. 5B, a common electrode lead 4 and aperipheral circuit region 102 may also be arranged in a place on theupper side of an array substrate 100 near its outer profile edge, and acontrol signal is input from the upper side to a working region 103. Foranother example, as shown in FIG. 5C, a common electrode lead 4 and aperipheral circuit region 102 may also be arranged in a place onopposite sides of an array substrate 100, such as on the left side andthe right side, near its outer profile edge. In this way, controlsignals can be input to a working region 103 at two sides at the sametime, and a technical effect of reducing signal delay can be achieved.In this way, a better working effect is achieved by the array substrate100. For the case that the planar area of an array substrate 100 islarger, this technical effect is more significant. It is to be notedthat terms “left”, “right”, “upper” in the embodiments of thisdisclosure refer to the relative locations shown in correspondingdrawings.

For example, the working region is provided with a display elementtherein, and the display element includes a pixel defining layer, alight emitting layer, a first electrode and a second electrode. Thepixel defining layer includes a plurality of openings; the lightemitting layer is disposed in the plurality of openings; the firstelectrode covers the pixel defining layer and the light emitting layer,and extends from the display region toward the first common electrodelead; and the second electrode is arranged between the base substrateand the light emitting layer. The first electrode is a common cathode,and the first common electrode lead is a common cathode lead; or thefirst electrode is a common anode, and the first common electrode leadis a common anode wire.

For example, as shown in FIG. 6, the working region 103 is provided witha plurality of array elements 14, and the plurality of array elementsinclude a common electrode 7, and the common electrode 7 is electricallyconnected to a common electrode lead 4. For example, the array elements14 may be an organic light-emitting diode device, and the organiclight-emitting diode device may be a top emission configuration, abottom emission configuration, or other configuration. Exemplarily, theorganic light-emitting diode device may include an anode 15 arranged ona base substrate 1, a cathode disposed on the base substrate 1 to beopposed to the anode 15, and an organic light-emitting layer 16 arrangedbetween the anode 15 and the cathode. In the embodiment shown in FIG. 6,the cathode is a common electrode 7, and in this case, the commonelectrode lead 4 is a common cathode lead, the first electrode is acathode (i.e., the common cathode), the second electrode is an anode,and a low-level signal is input to the common electrode 7 during theoperation. For example, the anode 15 may be a reflective electrode, or areflective layer (not shown in the figure) is disposed to be adjacent tothe anode 15, and lights are exited from the cathode side duringoperation. Alternatively, the cathode may be a reflective electrode, ora reflective layer is provided to be adjacent to the cathode, and lightsare exited from the anode side during operation. In other embodiment ofthe present disclosure, positions of the anode and the cathode areexchangeable. For example, the anode may be a common electrode 7. Inthis case, the common electrode lead 4 is a common anode lead, the firstelectrode is an anode (i.e., the common anode), the second electrode isa cathode, and a high-level signal is input to the common electrode 7during operation.

For example, the organic light-emitting diode device may further includea pixel defining layer 8 to define a plurality of light-emitting unitsor pixel units, so that crosstalk between lights from adjacentlight-emitting units or adjacent pixel units is prevented. The pixeldefining layer 8 includes a plurality of openings, the organiclight-emitting layer 16 is arranged in the openings, and the commonelectrode 7 may cover the pixel defining layer 8.

For example, the perimeter circuit 13 may be a gate driving circuit, ora data driving circuit, etc. For example, the gate driving circuit orthe data driving circuit includes thin film transistors, capacitors,gate-line leads or data-line leads, etc.

The array substrate provided by an embodiment of the disclosure can beused for electronic devices, such as display devices, illuminatingdevices, or the like. In the array substrate provided by the embodimentof the present disclosure, width occupied by the common electrode lead 4alone in the non-working region 101 is reduced, so that the arraysubstrate has a narrower bezel. In this way, a narrower bezel can berealized by a display device, an illuminating device, or the like, whichadopt the array substrate. A narrower bezel can be realized by a displaydevice, an illuminating device, or the like, which adopt the arraysubstrate. While a narrow bezel is realized, the saved space can be usedto increase width of a common electrode lead, so as to reduce theresistance of the common electrode lead. In this way, the resistance ofthe common electrode lead can be reduced. On the one hand, it ispropitious for the improvement of the transmission speed of a signal inthe common electrode lead, in addition, it is helpful to reducing thepower consumption and the generated Joule heat of the common electrodelead during the operation, and to reducing temperature rise caused bythe Joule heat. Consequently, it is beneficial to the improvement of thelifetime of the array substrate, the display device, or the illuminatingdevice.

At least one embodiment of the present disclosure also provides anelectronic device, which includes any of the substrates provided byembodiments of the present disclosure. For example, the electronicdevice may be a display device, an illuminating device, etc.Exemplarily, FIG. 7 is a schematic diagram of a display device providedby an embodiment of the present disclosure. As shown in FIG. 7, thedisplay device includes any of the array substrates provided by theembodiments of the present disclosure. For example, the display devicemay be an organic light-emitting diode display device. For example, thedisplay device may be implemented as the following products: a mobilephone, a tablet computer, a television, a display, a notebook computer,a digital photo frame, a navigator, or any other product or componentwith display function.

FIG. 7 is only a schematic diagram of a display device that includes anyof the array substrates provided in embodiment 2. For other structuresof the display device that are not shown, reference can be made toconventional techniques by those skilled in the art, and embodiments ofthe present disclosure do not limit them.

A narrower bezel can be achieved by the display device provided by anembodiment of the present disclosure. While a narrow bezel is realized,it is also beneficial to increasing width of a common electrode lead, soas to reduce the resistance of the common electrode lead. In this way,the resistance of the common electrode lead can be reduced. On the onehand, it is propitious for the improvement of the transmission speed ofsignal in the common electrode lead, in addition, it is beneficial toreducing power consumption and the generated joule heat of the commonelectrode lead during operation, to reducing the temperature rise causedby the Joule heat. Consequently, it is beneficial to the improvement ofthe lifetime of an array substrate, a display device, or an illuminatingdevice.

At least one embodiment of the present disclosure also provides an arraysubstrate manufacturing method, including: providing a base substrateincluding a working region, a non-working region outside of the workingregion and an outer profile edge, the non-working region including aperipheral circuit region near the working region and a non-circuitregion away from the working region; a peripheral circuit is formed inthe peripheral circuit region of the non-working region; and a commonelectrode lead extending along at least part of the outer profile edgeof the base substrate is formed. The peripheral circuit region isprovided with the peripheral circuit, the peripheral circuit is notprovided in the non-circuit region, the orthographic projection of thecommon electrode lead on the base substrate at least partially coincideswith the orthographic projection of the peripheral circuit region on thebase substrate, and the common electrode lead is insulated from theperipheral circuit.

Exemplarily, FIGS. 8A to 8M are schematic diagrams illustrating an arraysubstrate manufacturing method provided by an embodiment of the presentdisclosure. An exemplary introduction will be given below with referenceto an example in which an array substrate with an organic light-emittingdiode (OLED) device being included in a working region is formed.

As shown in FIG. 8A, a base substrate 1 is provided. The base substrate1 may be, for example, a glass substrate, a quartz substrate, a resin(e.g. polyethylene) substrate, etc. The base substrate 1 has an outerprofile edge 12 and includes a working region 103 and a non-workingregion 101 outside of the working region 103. The non-working region 101includes a peripheral circuit region 102 near the working region 103. Acircuit layer 2 is formed on the base substrate 1, which includesforming a peripheral circuit 13 in the peripheral circuit region 102.The peripheral circuit 13 may, for example, be a driving circuit, suchas a gate driving circuit, or a data driving circuit. The manufacturingmethod of the circuit will be exemplarily introduced below by taking theperipheral circuit 13 being a gate driving circuit as an example.

FIGS. 9A to 9F are schematic diagrams illustrating a manufacturingmethod of the driving circuit. Forming the peripheral circuit 13includes forming an internal connection portion and an externalconnection portion of the peripheral circuit 13. The external connectionportion includes an external connection joint and an external connectionlead, and the orthographic projection of the external connection jointon the base substrate 1 does not coincide with the orthographicprojection of a common electrode lead 4 on the base substrate 1. Forexample, the peripheral circuit region 102 includes a first zone 1021away from the working region 103 and a second zone 1022 near the workingregion 103. The internal connection portion is disposed in the firstzone 1021 of the peripheral circuit region 102, and the externalconnection joint is formed within the second zone 1022 of the peripheralcircuit region 102. For example, the first zone 1021 does not coincidewith the common electrode lead 4 in a direction perpendicular to thebase substrate 1, so that the orthographic projection of the externalconnection joint on the base substrate 1 does not coincide with theorthographic projection of the common electrode lead 4 on the basesubstrate 1. Description will be made below by taking formation of thinfilm transistors as an example.

Forming the peripheral circuit includes forming a plurality of thin filmtransistors, such as forming a first thin film transistor and a secondthin film transistor. A gate electrode, a source electrode, and a drainelectrode are included in each of the first thin film transistor and thesecond thin film transistor.

As shown in FIG. 9A, a plurality of first portions 1301 and a firstinsulating layer 1302 are formed in the first zone 1021 usingconventional techniques in the field. A first portion 1301 includes achannel area, a source area, and a drain area.

As shown in FIG. 9B, a gate metal layer 1303 is formed on the firstinsulating layer 1302, and for example, the gate metal layer 1303 may beformed by chemical vapor deposition, magnetron sputtering, or the like.Material of the gate metal layer 1303 may be copper, aluminum, a copperalloy, an aluminum alloy, silver, chromium, or the like, but is notlimited to the above listed categories.

Forming the peripheral circuit includes forming a gate-metal-layerpattern. For example, it may include forming gate electrodes of aplurality of thin film transistors, a first plate of a capacitor, apattern of a connecting line between the gate electrodes of theplurality of thin film transistors and a pattern of a peripheral circuitoutput lead by a same patterning process with a same mask. As shown inFIG. 9C, the gate metal layer 1303 is patterned, to simultaneously forma pattern of a plurality of gate electrodes 1305 corresponding to firstportions 1301 of the plurality of thin film transistors, respectively,the first plate 1304 of the capacitor, the plurality of gate electrodes1305 and a peripheral circuit signal output lead 1306. For example, thepatterning can be realized by a photolithographic process.

As shown in FIG. 9D, a second insulating layer 1307 covering a patternformed by a gate metal layer 1303. Second via holes 1308 for exposingsource electrodes and drain electrodes of a plurality of thin filmtransistors that are located in the first insulating layer 1302 and thesecond insulating layer 1307 are formed. For example, material of thefirst insulating layer 1302 and the second insulating layer 1307 may bean inorganic insulating material, such as silicon nitride, etc. In thiscase, the second via holes 1308 may be formed by a photolithographicprocess including exposure, development and etching. For example,material of the first insulating layer 1302 and the second insulatinglayer 1307 may be an inorganic insulating material or an organicinsulating material, which may, for example, be a photosensitive organicinsulating material. In this case, the second via holes 1308 may beformed by exposure-development process. In this way, the etching stepscan be decreased, and the process can be simplified.

For example, the method further includes forming a second-metal-layerpattern, which may include forming a second plate of a capacitor, aconnecting line of the peripheral circuit, and the external connectionjoint by a same patterning process with a same mask. The connecting lineincludes a first portion, a second portion and a third portion. Thesecond plate of the capacitor is electrically connected to a sourceelectrode of the first thin film transistor by the first portion of theconnecting line. A drain electrode of the first thin film transistor iselectrically connected with a source electrode of the second thin filmtransistor by the second portion of the connecting line. A drainelectrode of the second thin film transistor is electrically connectedwith the peripheral circuit signal output lead by the third portion ofthe connecting line.

Exemplarily, as shown in FIG. 9E, a second metal layer 1309 is formed onthe second insulating layer 1307, and the second metal layer 1309 iselectrically connected to the source areas and drain areas of activelayers of the thin film transistors through the second via holes 1308.For example, the second metal layer 1309 may be formed by chemical vapordeposition, magnetron sputtering, or the like. Material of the secondmetal layer 1309 may be copper, aluminum, a copper alloy, an aluminumalloy, silver, chromium, or the like, but is not limited thereto.

As shown in FIG. 9F, the second metal layer 1309 is patterned tosimultaneously form a pattern of a second plate 1310 of a capacitor, afirst portion 1311 of a connecting line for electrically connecting thesecond plate 1310 of the capacitor to a source electrode of the firstthin film transistor, a second portion 1312 of the connection line thatelectrically connects a drain electrode of the first thin filmtransistor to a source electrode of the second thin film transistor, athird portion 1313 of the connecting line for electrically connecting adrain electrode of the second thin film transistor to the peripheralcircuit signal output lead 1306 and an external connection joint 901.

For example, locating the external connection joint 901 in the secondzone 1022 may be realized in the process of patterning the second metallayer 1309. For example, it may be electrically connected to sourceelectrodes or drain electrodes of a plurality of thin film transistorsin each row. It may also be used for connection to a controller outsideof the gate driving circuit 13, for example, it may be connected to atiming controller, or the like. The peripheral circuit layer 2 shown inFIG. 8A may be formed by using the above method, and it is realized thatan internal connecting portion of the peripheral circuit is formed inthe first zone 1021 of the peripheral circuit region 102, and theexternal connection joint 901 is disposed in the second zone 1022 of theperipheral circuit region 102, so as to make preparation for thesubsequent formation of an external connection portion of the peripheralcircuit in the second zone 1022. With the method provided by anembodiment of the present disclosure, it is possible that after a partof devices (such as a second plate of a capacitor and an externalconnection joint) of the peripheral circuit and connection patternbetween devices are simultaneously formed with the second metal layer1309, it is unnecessary to separately form a metal used to connect thedevices after formation of devices of the peripheral circuit, which isbeneficial to the simplification of the process. It is to be noted thatnumber/amount of the external connection joints 901 shown in FIG. 9F isone, which is merely acts as an exemplary description, and amount of theexternal connection joints 901 may be multiple.

As shown in FIG. 8B, the method further includes forming an interlayerinsulating layer 3 on the peripheral circuit layer 2. The wholeperipheral circuit 13 is disposed below the interlayer insulating layer3, that is, the interlayer insulating layer 3 covers the peripheralcircuit 13. For example, the interlayer insulating layer 3 covers theexternal connection joint 901, the second plate 1310 of the capacitor,and the connecting line, etc. In this way, a flat insulating layer canbe formed on the peripheral circuit 13. When a common electrode lead 4is arranged on the interlayer insulating layer 3, and a portion or eventhe entirety of the common electrode lead 4 overlaps with the peripheralcircuit under the interlayer insulating layer 3, the insulation of thecommon electrode lead 4 from the peripheral circuit 13 can be realized.Material of the interlayer insulating layer 3 may be the same as that ofthe first insulating layer 1302, which can refer to the abovedescription. For example, the interlayer insulating layer 3 may beformed by a coating process, a deposition process, or the like.

As shown in FIG. 8C, a via hole 301 exposing the external connectionjoint 901 is formed in the interlayer insulating layer 3. The specificmethod may refer to the above description about the method for formingthe second via hole 1308.

As shown in FIG. 8D, a common electrode lead layer 901 is formed on theinterlayer insulating layer 3. Material of the common electrode leadlayer 901 may, for example, be a transparent conductive material or anopaque conductive material. The transparent conductive material may bematerial, such as indium tin oxide (ITO), indium zinc oxide (IZO), orthe like, and the opaque conductive material may, for example, be ametallic material, such as copper, aluminum, a copper alloy, or thelike, with higher conductivity. The common electrode lead layer 901 maybe formed by chemical vapor deposition, magnetron sputtering, or thelike.

As shown in FIG. 8E, for example, the common electrode lead layer 901may be patterned by a photolithographic process so as to form a commonelectrode lead 4 along at least part of the outer profile edge of thebase substrate 1. The orthographic projection of the common electrodelead 4 on the base substrate 1 coincides with a portion of theprojection of an internal connected portion of the peripheral circuit 13in the peripheral circuit region 102 on the base substrate 1, that is,it overlaps with the internal connection portion of the peripheralcircuit in the peripheral circuit region 102 in a directionperpendicular to the base substrate 1. In this way, the width areaoccupied by the common electrode lead 4 alone in the non-working region101 can be reduced in the array substrate obtained by using the methodprovided by an embodiment of the present disclosure, and the arraysubstrate can have a narrower bezel. In this way, a narrower bezel canbe achieved by a display device, an illuminating device, or the like,which adopt the array substrate. The saved space may be used to increasethe width of a common electrode lead, so as to reduce the resistance ofthe common electrode lead.

In FIG. 8E, the interlayer insulating layer 3 is arranged between theperipheral circuit 13 and the common electrode lead 4, and covers theperipheral circuit 13, so that the peripheral circuit 13 and the commonelectrode lead 4 are insulated from each other. The external connectionportion 9 of the peripheral circuit 13 includes an external connectionjoint 901 and an external connection lead 902. The external connectionlead 902 is formed while the common electrode lead 4 is formed bypatterning the common electrode lead layer 901, namely the externalconnection lead 902 of the peripheral circuit 13 and the commonelectrode lead 4 are formed by a same patterning process with a samemask. In this way, it is beneficial to the simplification of thefabricating process of the array substrate. The external connection lead902 is electrically connected to the external connection joint 901through the via hole 301. In this way, the external connection joint 901is formed in a second zone 1022 of the peripheral circuit region thatdoes not overlap with the common electrode lead 4 in a directionperpendicular to the base substrate 1, so as to facilitate forming a viahole over the external connection joint 901 and arranging the externalconnection lead 902. In this way, this process will not be hindered bythe common electrode lead 4.

As shown in FIG. 8F, a planarization layer 5 covering the base substrate1 is formed. The specific formation method and material of theplanarization layer 5 may refer to conventional techniques in the field.

As shown in FIG. 8G, the planarization layer 5 is patterned to form anopening that exposes at least part of the common electrode lead 4.

As shown in FIG. 8H, a pixel defining layer 8 is formed on theplanarization layer 5 by photolithography. The pixel defining layer 8has an opening.

As shown in FIG. 8I, a conductive layer 602 is formed on theplanarization layer 5. Material of the conductive layer 602 may be atransparent conductive material, or an opaque conductive material. Thetransparent conductive material may be material, such as indium tinoxide (ITO), or indium zinc oxide (IZO), or the like, and the opaqueconductive material may, for example, be a metallic material, such ascopper, aluminum, a copper alloy, an aluminum alloy, or the like. Forexample, the conductive layer 602 may be formed by chemical vapordeposition, magnetron sputtering, or the like. It is to be noted thatmaterial and specific production method of the conductive layer 602 arenot limited to the above listed categories.

As shown in FIG. 8J, for example, the conductive layer 602 may bepatterned by photolithography, to form a bridging conductive layer 6 andan anode 15 simultaneously. In other embodiment, the anode 15 formed inFIG. 8J may also be changed to be a cathode. Here, description will bemade by taking the anode as an example. The anode 15 is located in theworking region 103, and in an opening of the pixel defining layer 8. Thebridging conductive layer 6 is formed in the peripheral circuit region102, and is insulated from the peripheral circuit 13 and extends acrossthe peripheral circuit 13. The bridging conductive layer 6 iselectrically connected with the common electrode lead 4. In theembodiment shown in FIGS. 8A to 8M, one end of the bridging conductivelayer 6 away from the working region 103 directly overlaps with thecommon electrode lead 4 to achieve electrical connection between thetwo. This direct overlapping is beneficial to the reduction of thecontact resistance and is easy to be fabricated. The orthographicprojection of the common electrode lead 4 on the base substrate 1partially coincides with the orthographic projection of the peripheralcircuit region 102 on the base substrate 1. For example, theorthographic projection of the common electrode lead 4 on the basesubstrate 1 partially coincides with the orthographic projection of theperipheral circuit 13 on the base substrate 1. That is, in a directionperpendicular to the base substrate 1, a portion of the common electrodelead 4 coincides with a portion of the peripheral circuit 12. Foranother example, the peripheral circuit 13 includes a plurality ofcircuit elements (such as thin film transistors, and leads, etc.) and aspacer zone interposed between the plurality of circuit elements, andthe orthographic projection of the common electrode lead 4 on the basesubstrate 1 coincides with the orthographic projection of the spacerzone on the base substrate 1.

As shown in FIG. 8K, for example, an organic light-emitting layer 16 maybe formed on the anode 15 by a coating process or a deposition process.In other embodiment, it may be an electroluminescent layer (e.g., anorganic electroluminescent layer).

As shown in FIG. 8L, a common electrode 7 is formed in the workingregion 103. For example, the common electrode 7 may on the organiclight-emitting layer 16 and the pixel defining layer 8, and extend tothe peripheral circuit region 102 and directly contact the bridgingconductive layer 6 to achieve electrical connection between them. Inthis way, electrical connection between the common electrode 7 and thecommon electrode lead 4 is achieved through the bridging conductivelayer 6. That is, the bridging conductive layer 6 electrically connectsthe common electrode lead 4 with the common electrode 7. An arraysubstrate 100 as shown in FIG. 8L can be formed by the above method.

FIG. 8M is an enlarged schematic diagram of part 20 of the arraysubstrate 100 in FIG. 8L. The enlarged schematic diagram exemplarilyillustrates structure of the peripheral circuit 13.

Embodiments of the present disclosure provide a display-substrateperipheral circuit structure, an array substrate and a method ofmanufacturing the same, and a display device, in which, a commonelectrode lead at least partially overlaps with and is insulated from aperipheral circuit region, so that the width area occupied by the commonelectrode lead alone in a non-working region can be reduced, and whenthe peripheral circuit structure is applied to the display device and soon, it is beneficial to the realization of a narrower bezel.

The foregoing is only the exemplary embodiments of the presentdisclosure and not intended to limit the scope of the presentdisclosure. The scope of the present disclosure is defined by theappended claims.

What is claimed is:
 1. A substrate, comprising a base substrate,comprising a working region, and a non-working region outside of theworking region, the non-working region including a peripheral circuitregion near the working region and a non-circuit region away from theworking region; a peripheral circuit in the peripheral circuit region; acommon electrode lead in the non-working region; a common electrode; abridging conductive layer made of opaque conductive material in thenon-working region and electrically connects the common electrode andthe common electrode lead; and an orthographic projection of thebridging conductive layer on the base substrate at least partiallycoincides with an orthographic projection of the peripheral circuitregion on the base substrate, and the bridging conductive layer isinsulated from the peripheral circuit.
 2. The substrate according toclaim 1, wherein the bridging conductive layer extends across theperipheral circuit, and is made of metal material.
 3. The substrateaccording to claim 1, wherein the opaque conductive material includesaluminum.
 4. The substrate according to claim 1, wherein the bridgingconductive layer is arranged on a side of the common electrode lead awayfrom the base substrate.
 5. The substrate according to claim 1, whereinthe bridging conductive layer is arranged on a side of the commonelectrode facing the base substrate.
 6. The substrate according to claim1, wherein the peripheral circuit is not provided in the non-circuitregion, an orthographic projection of the common electrode lead on thebase substrate at least partially coincides with an orthographicprojection of the peripheral circuit region on the base substrate, andthe common electrode lead is insulated from the peripheral circuit. 7.The substrate according to claim 1, further comprising an outer profileedge, wherein the common electrode lead extends along at least part ofthe outer profile edge, and a portion of the common electrode lead is inthe non-circuit region.
 8. The substrate according to claim 7, furthercomprising an interlayer insulating layer, wherein the interlayerinsulating layer is provided between the peripheral circuit and thecommon electrode lead, and covers the peripheral circuit to insulate theperipheral circuit from the common electrode lead.
 9. The substrateaccording to claim 8, wherein an end of the interlayer insulating layernear the outer profile edge of the base substrate has a flat surface,and the common electrode lead is arranged on the flat surface; theinterlayer insulating layer includes a via hole exposing an externalconnection joint of the peripheral circuit, and the external connectionlead is electrically connected to the external connection joint of theperipheral circuit through the via hole.
 10. The substrate according toclaim 1, wherein the common electrode extends from the working region tothe non-working region.
 11. The substrate according to claim 1, whereinthe bridging conductive layer is insulated from the peripheral circuitand includes two sides directly contacting the common electrode lead andthe common electrode, respectively.
 12. The substrate according to claim1, wherein the peripheral circuit includes a first thin film transistorand a second thin film transistor, wherein each of the first thin filmtransistor and the second thin film transistor includes a gateelectrode, a source electrode and a drain electrode; a capacitorincluding a first plate and a second plate disposed oppositely to eachother, wherein the first plate and gate electrodes of the thin filmtransistors are arranged in the same layer; a peripheral circuit signaloutput lead configured to output an output signal of the peripheralcircuit to the working region; and a connecting line, including a firstportion; wherein the second plate of the capacitor is electricallyconnected with the source electrode of the first thin film transistorthrough the first portion of the connecting line; and the externalconnection joint, the second plate of the capacitor and the connectingline are provided in the same layer.
 13. The substrate according toclaim 12, wherein the connecting line further comprises a second portionand a third portion, wherein the drain electrode of the first thin filmtransistor is electrically connected with the source electrode of thesecond thin film transistor through the second portion of the connectingline; and the drain electrode of the second thin film transistor iselectrically connected to the peripheral circuit signal output leadthrough the third portion of the connecting line.
 14. The substrateaccording to claim 13, wherein the working region comprises a displayelement, the display element comprises: a pixel defining layer includinga plurality of openings; a light-emitting layer in the plurality ofopenings; a first electrode covering the pixel defining layer and thelight-emitting layer, and extending from the display region toward thecommon electrode lead; a second electrode provided between the basesubstrate and the light-emitting layer; and the first electrode is acommon cathode, the common electrode lead is a common cathode wire; orthe first electrode is a common anode, the common electrode lead is acommon anode wire.
 15. The substrate according to claim 1, wherein theperipheral circuit is a gate driving circuit of GOA type.
 16. Thesubstrate according to claim 1, wherein the peripheral circuit comprisesan external connection portion, the external connection portioncomprises an external connection lead; and the external connection leadand the common electrode lead are made of a same material and providedon a same layer.
 17. The substrate according to claim 16, wherein theexternal connection portion further comprises an external connectionjoint; an orthographic projection of the external connection joint onthe base substrate does not coincides with the orthographic projectionof the common electrode lead on the base substrate; and the externalconnection joint is on a side of the common electrode lead near theouter profile edge of the base substrate, or the external connectionjoint is on a side of the common electrode lead away from the outerprofile edge of the base substrate.
 18. An electronic device, comprisinga substrate, wherein the substrate comprises: a base substrate,comprising a working region, and a non-working region outside of theworking region and an outer profile edge, the non-working regionincluding a peripheral circuit region near the working region and anon-circuit region away from the working region; a peripheral circuit inthe peripheral circuit region; and a common electrode lead in thenon-working region; a common electrode; a bridging conductive layer madeof opaque conductive material in the non-working region and electricallyconnects the common electrode and the common electrode lead, and anorthographic projection of the bridging conductive layer on the basesubstrate at least partially coincides with an orthographic projectionof the peripheral circuit region on the base substrate, and bridgingconductive layer is insulated from the peripheral circuit.
 19. A methodof manufacturing a substrate, comprising providing a base substrate, thebase substrate including a working region, and a non-working regionoutside of the working region, the non-working region including aperipheral circuit region near the working region and a non-circuitregion away from the working region; forming a peripheral circuit in theperipheral circuit region of the non-working region; and forming acommon electrode lead in the non-working region; forming a commonelectrode; and forming a bridging conductive layer by an opaqueconductive material in the non-working region to electrically connectthe common electrode and the common electrode lead; wherein anorthographic projection of the bridging conductive layer on the basesubstrate at least partially coincides with an orthographic projectionof the peripheral circuit region on the base substrate, and bridgingconductive layer is insulated from the peripheral circuit.
 20. Themethod according to claim 19, wherein the bridging conductive layer isformed to extend across the peripheral circuit by a metal materialincluding aluminum, and the bridging conductive layer is formed in thenon-working region, and is insulated from the peripheral circuit andelectrically connects between the common electrode lead and the commonelectrode.